| Campo DC | Valor | Idioma |
|---|
| dc.contributor.author | COPETTI, THIAGO S. | - |
| dc.contributor.author | BALEN, TIAGO R. | - |
| dc.contributor.author | MEDEIROS, GUILHERME C. | - |
| dc.contributor.author | Letícia Maria Bolzani Pöhls | - |
| dc.date.accessioned | 2019-07-26T12:22:59Z | - |
| dc.date.available | 2019-07-26T12:22:59Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.isbn | 9781538628805 | - |
| dc.identifier.uri | http://hdl.handle.net/10923/15196 | - |
| dc.language.iso | pt_BR | - |
| dc.relation.ispartof | 2017 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), 2017, Brasil. | - |
| dc.rights | openAccess | - |
| dc.title | Analyzing the behavior of FinFET SRAMs with resistive defects | - |
| dc.type | conferenceObject | - |
| dc.date.updated | 2019-07-26T12:22:58Z | - |
| dc.identifier.doi | DOI:10.1109/vlsi-soc.2017.8203483 | - |
| Aparece en las colecciones: | Apresentação em Evento
|
